The use of heterocyclic compounds in the organometallic chemical vapour deposition of epitaxial ZnS, ZnSe and ZnO
- 29 February 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 66 (1) , 26-34
- https://doi.org/10.1016/0022-0248(84)90073-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Electroluminescence from films of ZnS:Mn prepared by organometallic chemical vapor depositionIEEE Transactions on Electron Devices, 1983
- Optical films of single crystal zinc selenideJournal of Crystal Growth, 1982
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Recollections and reflections of MO-CVDJournal of Crystal Growth, 1981
- A new approach to MOCVD of indium phosphide and gallium-indium arsenideJournal of Crystal Growth, 1981
- Epitaxial growth of ZnSe on (100) GaAs by open-tube transport of elemental vapours in H2 flowsJournal of Crystal Growth, 1981
- InP epitaxy with a new metalorganic compoundElectronics Letters, 1980
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- Reactions of phosphine with trimethylindiumJournal of Inorganic and Nuclear Chemistry, 1960