Growth and characterisation of InSb/In1−xAlxSb strained-layer superlattices by magnetron sputter epitaxy
- 1 June 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 70-71, 526-530
- https://doi.org/10.1016/0169-4332(93)90574-u
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- InSb/In1−xAlxSb strained-layer superlattices grown by magnetron sputter epitaxyApplied Physics Letters, 1992
- Magnetron sputter epitaxy (MSE) of InSb on (100) GaAs and (100, 111) InSb for infrared detector applicationsSemiconductor Science and Technology, 1991
- Effect of substrate temperature on the growth rate and surface morphology of heteroepitaxial indium antimonide layers grown on (100) GaAs by metalorganic magnetron sputteringJournal of Applied Physics, 1989
- Raman scattering study of folded acoustic phonons in GaAs/InxGa1−xAs strained-layer superlatticesApplied Physics Letters, 1987
- Influence of the supercell structure on the folded acoustical Raman line intensities in superlatticesPhysical Review B, 1987
- Folded acoustic phonons in Si/strained-layer superlatticesPhysical Review B, 1987
- Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxyApplied Physics Letters, 1985
- Folded acoustic and quantized optic phonons in (GaAl)As superlatticesPhysical Review B, 1985