Light-induced metastable defects in amorphous silicon: The role of hydrogen

6 January 1986

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 48 (1) , 62-64
https://doi.org/10.1063/1.97022

Abstract

The role of hydrogen in the creation and annealing kinetics of the light-induced metastable defects in hydrogenated amorphous silicon is investigated using electron spin resonance. Deuterated and hydrogenated films exhibited the same defect creation rate and nearly identical distributions of annealing energies. Implications of these results for various microscopic models for the creation of metastable defects are discussed.

Keywords

This publication has 4 references indexed in Scilit:

Role of mechanical stress in the light-induced degradation of hydrogenated amorphous silicon
Applied Physics Letters, 1985
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
Physical Review B, 1985
Stability of n-i-p amorphous silicon solar cells
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Light-induced dangling bonds in hydrogenated amorphous silicon
Applied Physics Letters, 1981