Kinetics of solid phase interaction between Al and a-Si:H
- 1 November 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (9) , 5225-5231
- https://doi.org/10.1063/1.357172
Abstract
The kinetics of solid phase interaction between Al and a‐Si:H have been investigated. The experiment led to the observation of low‐temperature crystallization as has been reported. The crystallization temperature was found to be 300–350 °C from diffraction studies. From the x‐ray photoelectron spectroscopy study, electron transfer from Al to Si was observed in the intermixing layer in samples annealed at RT and 200 °C whereas there is no evidence of the electron transfer for 300 and 350 °C annealed samples. To explain these results, a comparison is made with the interaction in the Cr/a‐Si:H system previously reported and the interdiffusion model is proposed.This publication has 13 references indexed in Scilit:
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