Photoluminescence study of lateral confinement energy in T-shapedInxGa1−xAsquantum wires

A study of high-quality ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ T-shaped quantum wires (T-QWR’s) via photoluminescence spectroscopy to characterize the lateral confinement effect is reported. The effective lateral confinement energy of excitons in 3.5-nm-scale ${\mathrm{In}}_{0.17}{\mathrm{Ga}}_{0.83}\mathrm{As}/{\mathrm{Al}}_{0.3}{\mathrm{Ga}}_{0.7}\mathrm{As}$ T-QWR’s is found to be as large as 34 meV. The value has been examined in comparison with the previous results on ${\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}}_{0.3}{\mathrm{Ga}}_{0.7}\mathrm{As}$ and GaAs/AlAs T-QWR’s.