A self-aligned ridge substrate laser fabricated by single-step MOVPE
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 843-849
- https://doi.org/10.1016/0022-0248(88)90629-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- AlGaAs/GaAs self-aligned LD's fabricated by the process containing vapor phase etching and subsequent MOVPE regrowthIEEE Journal of Quantum Electronics, 1987
- A novel technology for formation of a narrow active layer in buried heterostructure lasers by single-step MOCVDIEEE Journal of Quantum Electronics, 1987
- A study of the orientation dependence of Ga(Al)As growth by MOVPEJournal of Crystal Growth, 1986
- Selective epitaxial growth of GaAs by low-pressure MOVPEJournal of Crystal Growth, 1985
- A 0.2 W CW laser with buried twin-ridge substrate structureIEEE Journal of Quantum Electronics, 1985
- Visible GaAlAs V-channeled substrate inner stripe laser with stabilized mode using p-GaAs substrateApplied Physics Letters, 1982
- Single-longitudinal-mode metalorganic chemical-vapor-deposition self-aligned GaAlAs-GaAs double-heterostructure lasersApplied Physics Letters, 1980