Band bending and interface states for metals on GaAs
- 13 June 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (24) , 2052-2054
- https://doi.org/10.1063/1.99578
Abstract
We have used soft x-ray photoemission and optical emission spectroscopies to observe a broad range of Fermi level stabilization energies at metal interfaces with GaAs(100) surfaces grown by molecular beam epitaxy (MBE). The observed metal- and As-related interface cathodoluminescence plus orders-of-magnitude differences in bulk-defect-related photoluminescence between melt- versus MBE-grown GaAs suggest a role of bulk crystal growth and processing in controlling Schottky barrier formation.Keywords
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