Ion Implantation as a Tool to Control Properties of Amorphous Hydrogenated Silicon
- 16 March 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 94 (1) , 343-350
- https://doi.org/10.1002/pssa.2210940142
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Doping of amorphous silicon by ion implantation: Electrical, optical and photoelectrical propertiesCzechoslovak Journal of Physics, 1981
- The effects of ion implantation on the electrical properties of amorphous siliconPhilosophical Magazine Part B, 1980
- Transport in lithium-doped amorphous siliconfPhilosophical Magazine Part B, 1979
- Substitutional doping of amorphous siliconSolid State Communications, 1975