Doping of amorphous silicon by ion implantation: Electrical, optical and photoelectrical properties
- 1 July 1981
- journal article
- Published by Springer Nature in Czechoslovak Journal of Physics
- Vol. 31 (7) , 744-751
- https://doi.org/10.1007/bf01596329
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Ion implantation in amorphous germanium and siliconSolid State Communications, 1978
- Enhanced photoconductivity in nitrogen-doped amorphous silicon prepared by d.c. sputteringPhilosophical Magazine Part B, 1978
- Local structure, bonding, and electronic properties of covalent amorphous semiconductorsContemporary Physics, 1978
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977
- Density of amorphous silicon filmsCzechoslovak Journal of Physics, 1973
- Photoconductivity and absorption in amorphous SiJournal of Non-Crystalline Solids, 1973