Bias-dependence of the intrinsic element values of InGaAs/InAlAs/InP inverted heterojunction bipolar transistor
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 40 (5) , 1012-1014
- https://doi.org/10.1109/22.137411
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- InGaAs/InAlAs/InP collector-up microwave heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Subpicosecond InP/InGaAs heterostructure bipolar transistorsIEEE Electron Device Letters, 1989
- GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applicationsIEEE Transactions on Microwave Theory and Techniques, 1989