Raman scattering characterization of Ga1−xAlxAs/GaAs heterojunctions: Epilayer and interface
- 15 November 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (10) , 961-963
- https://doi.org/10.1063/1.93356
Abstract
We have used Raman spectroscopy to characterize Ga1−xAlxAs/GaAs heterojunctions (x≊0.9) grown by liquid phase epitaxy. The GaAs substrate had a (100) surface and the Ga1−xAlxAs epilayer was about 5000 Å thick. Signals were observed from both the Ga1−xAlxAs epilayer and the GaAs substrate at the interface. Information about the quality of the epilayer can be gained from several aspects of the spectrum including linewidths, violations of polarization selection rules (e.g., observation of symmetry forbidden TO mode), and the amplitude of the disorder‐activated LA mode (DALA). These results are correlated with the properties of the substrate and growth condition. In addition the signal observed from the GaAs substrate revealed interesting features such as coupled plasmon modes and hence yielded information about band‐ bending and dopant diffusion at the interface.Keywords
This publication has 7 references indexed in Scilit:
- Raman investigation of anharmonicity and disorder-induced effects inepitaxial layersPhysical Review B, 1981
- Disorder activated Raman scattering in Ga1−xAlxAs alloysSolid State Communications, 1981
- Nondestructive characterization of Ga1−xAlxAs–GaAs interfaces using nuclear profilingJournal of Vacuum Science and Technology, 1981
- Rectification in AlxGa1-xAs-GaAs N-n heterojunction devicesSolid-State Electronics, 1981
- Investigation of heterojunctions for MIS devices with oxygen-doped AlxGa1−xAs on n-type GaAsJournal of Applied Physics, 1979
- Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAsApplied Physics A, 1978
- Observations of phonon line broadening in the III-V semiconductors by surface reflection Raman scatteringPhysical Review B, 1974