Growth of Bulk CuGaS2 Single Crystals Using Solution Bridgman Method
- 1 June 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (6A) , L1001
- https://doi.org/10.1143/jjap.29.l1001
Abstract
Bulk CuGaS2 single crystals have been grown using a modified Bridgman technique from In solutions (solution Bridgman method). At temperatures below 1020°C, where a miscibility gap exists in the In solutions with a stoichiometric CuGaS2 solute, sulfur-excess In solutions are required for obtaining single crystals. The crystals are generally CuGa x In1-x S2 alloys with (1-x)=0.03–0.06 due to partial occupation of Ga sites by In atoms.Keywords
This publication has 9 references indexed in Scilit:
- Growth of CuGaSe2 single crystals by the traveling heater methodJournal of Crystal Growth, 1989
- Electroreflectance Studies in CuGaS2Japanese Journal of Applied Physics, 1989
- Crystal Growth of CuGaS2 from Te, Te-Cu and Te-Cu-S SolutionsJapanese Journal of Applied Physics, 1985
- Optical properties and defect chemistry of p-CuInS2Journal of Physics and Chemistry of Solids, 1984
- Crystallization of CuGaS2 from Pb and Sn solutionsJournal of Crystal Growth, 1981
- Crystallization of CuGaS2 from indium solutionsCrystal Research and Technology, 1980
- Preparation and properties of ZnS-CuGaS2 heterodiodesJournal of Luminescence, 1979
- Growth of Single Crystals of CuGaS2and CuGa1-xInxS2in In SolutionJapanese Journal of Applied Physics, 1972
- Linear and nonlinear optical properties of AgGaS2, CuGaS2, and CuInS2, and theory of the wedge technique for the measurement of nonlinear coefficientsIEEE Journal of Quantum Electronics, 1971