Modeling of Ge nanocluster evolution in ion-implanted SiO2 layer
- 1 January 1999
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 147 (1-4) , 286-291
- https://doi.org/10.1016/s0168-583x(98)00562-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidationApplied Physics Letters, 1998
- Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide filmsApplied Physics Letters, 1997
- Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layersApplied Physics Letters, 1997
- Generalized rate theory for spatially inhomogeneous systems of point defect sinksPhysica A: Statistical Mechanics and its Applications, 1994
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965