Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films
- 1 December 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (22) , 3215-3217
- https://doi.org/10.1063/1.120294
Abstract
The depth distribution of Ge implanted into thermally grown SiO2 films has been studied after annealing using transmission electron microscopy, Rutherford backscattering spectrometry, and x-ray diffraction. At annealing temperatures above 900 °C a significant redistribution of the as-implanted Ge profile was found. Crystalline Ge nanoclusters embedded in the SiO2 matrix are formed within a cluster band with well defined boundaries. The evolution of nanoclusters can be explained qualitatively by a model based on nucleation, growth and Ostwald ripening of Ge precipitates. Besides, chemical and interface reactions lead to the formation of additional Ge peaks near the surface and at the Si/SiO2 interface.Keywords
This publication has 17 references indexed in Scilit:
- Evolution of nanocluster ensembles: Computer simulation of diffusion and reaction controlled Ostwald ripeningNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Progress towards silicon optoelectronics using porous silicon technologyApplied Surface Science, 1996
- Self-structuring of buried SiO2 precipitate layers during IBS: A computer simulationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Computer simulation of mechanisms of the SIMOX processNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Photoluminescence of Si Microcrystals Embedded in SiO2 Glass FilmsJapanese Journal of Applied Physics, 1994
- Ostwald ripening during ion beam synthesis — a computer simulation for inhomogeneous systemsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
- The luminescence of porous Si: the case for the surface state mechanismJournal of Luminescence, 1993
- Experimental Study of Precipitation Processes in Oxygen Implanted SiliconMRS Proceedings, 1993
- Zero-dimensional "excitons" in semiconductor clustersIEEE Journal of Quantum Electronics, 1986
- Annealing characteristics of Si-rich SiO2 filmsApplied Physics Letters, 1985