The density of gap states in single- and multi-layer of a-Si:H measured by optical absorption and infrared stimulated current
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 751-754
- https://doi.org/10.1016/0022-3093(87)90177-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Influence of deposition rate on ESR signals in a-SiJournal of Non-Crystalline Solids, 1987
- Density-of-states distribution in the mobility gap of a-Si:HJournal of Non-Crystalline Solids, 1985
- Charge transfer doping in amorphous semiconductor superlatticesApplied Physics Letters, 1984
- Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivityJournal of Non-Crystalline Solids, 1983
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982