Step Heights of Switching Effects of Single Interface Traps in Mosfets

This publication has 4 references indexed in Scilit:

• Deep level transient spectroscopy on single, isolated interface traps in field-effect transistors
  Applied Physics Letters, 1988
• Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET's
  IEEE Transactions on Electron Devices, 1987
• 1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistors
  Applied Physics Letters, 1985
• Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
  Physical Review Letters, 1984