Deep level transient spectroscopy on single, isolated interface traps in field-effect transistors
- 22 February 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (8) , 634-636
- https://doi.org/10.1063/1.99388
Abstract
Electron emission from single, isolated traps is observed in stepped current transients of micrometer-size metal oxide semiconductor field-effect transistors. Deep level transient spectroscopy evaluation is performed by counting traps to estimate the average state density Dit ≊6 ×1010 eV−1 cm−2 close to the conduction-band edge (Ec−Eit =20–250 meV). The capture coefficient (prefactor for activated emission) is determined to Bn =10−21 cm3 s−1 for these slow traps.Keywords
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