Composition and temperature dependence of the direct band gap of GaAs1−xNx (0≤x≤0.0232) using contactless electroreflectance
- 1 May 1998
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 27 (5) , 484-487
- https://doi.org/10.1007/s11664-998-0181-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Bowing parameter of the band-gap energy of GaNxAs1−xApplied Physics Letters, 1997
- N incorporation in GaP and band gap bowing of GaNxP1−xApplied Physics Letters, 1996
- Growth of GaAsN by low-pressure metalorganic chemical vapor deposition using plasma-cracked N2Journal of Crystal Growth, 1994
- Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N SourceJapanese Journal of Applied Physics, 1994
- Metalorganic vapor phase epitaxy of GaP1−xNx alloys on GaPApplied Physics Letters, 1993
- Exciton-Optical Phonon Interaction in Reduced Dimensional Systems: Temperature Dependence of the LinewidthPublished by Springer Nature ,1993
- Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy LayersJapanese Journal of Applied Physics, 1992
- Generalized Franz-Keldysh theory of electromodulationPhysical Review B, 1990
- Lpe highly perfect ingaasp/lnp structure characterization by x-ray double crystal diffractometryJournal of Electronic Materials, 1987
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967