Well-width dependence of intersubband absorption in InGaAs/InAlAs multiquantum wells
- 19 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (12) , 1149-1151
- https://doi.org/10.1063/1.102546
Abstract
The well-width dependence of intersubband absorption in InGaAs/InAlAs multiquantum wells grown by molecular beam epitaxy is investigated. The energies of the absorption peaks decrease from 300 to 100 meV with an increasing well width from 35 to 200 Å. This well-width dependence of the peak energy is in good agreement with theoretical calculations. For a wide quantum well, two sharp absorption peaks were observed, including the transitions from the second to the third subbands.Keywords
This publication has 7 references indexed in Scilit:
- GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratingsApplied Physics Letters, 1989
- Transient absorption spectra of a modulation-doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure measured by picosecond infrared pulsesApplied Physics Letters, 1989
- Intersubband absorption in a modulation-doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structureApplied Physics Letters, 1988
- InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ=4.4 μmApplied Physics Letters, 1988
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Fast relaxing absorptive nonlinear refraction in superlatticesApplied Physics Letters, 1983
- The electron effective mass in heavily doped GaAsJournal of Physics C: Solid State Physics, 1979