Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition
- 22 January 2002
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 91 (3) , 1104-1107
- https://doi.org/10.1063/1.1427143
Abstract
We report the effect of strain-induced indium clustering on the emission properties of InGaN/GaN multiple quantum wells grown with high indium composition by metalorganic chemical vapor deposition. Indium clustering confirmed by high-resolution transmission electron microscopy results in the redshift of the emission peak and the increase of the integrated photoluminescence (PL) intensity. We found that strong carrier localization in indium clustering induces the increases of the activation energy of PL integrated intensity, the temperature independence of PL decay profiles, and the intensity fluctuation of the cathodoluminescence images. All these observations suggest structurally and optically that the improved emission properties in the InGaN/GaN multiple quantum well with high indium composition are associated with the localized states in the strain-induced indium cluster.This publication has 13 references indexed in Scilit:
- Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wellsApplied Physics Letters, 2001
- Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wellsApplied Physics Letters, 2000
- Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wellsJournal of Applied Physics, 2000
- Resonant hole localization and anomalous optical bowing in InGaN alloysApplied Physics Letters, 1999
- Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopyApplied Physics Letters, 1998
- “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wellsApplied Physics Letters, 1998
- Spatially resolved cathodoluminescence spectra of InGaN quantum wellsApplied Physics Letters, 1997
- Zero-dimensional excitonic confinement in locally strained Zn1−xCdxSe quantum wellsApplied Physics Letters, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- Recent Developments in the use of the Tripod Polisher for TEM Specimen PreparationMRS Proceedings, 1991