Flattening Transition on GaAs (411)A Surfaces Observed by Scanning Tunneling Microscopy
- 1 November 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (11A) , L1490
- https://doi.org/10.1143/jjap.34.l1490
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Evaluation of the highly coherent surface structure of the GaAs (411)A plane using scanning tunneling microscopyJournal of Crystal Growth, 1995
- Surface structure transitions on InAs and GaAs (001) surfacesPhysical Review B, 1995
- Structures of As-Rich GaAs(001)-(2 × 4) ReconstructionsPhysical Review Letters, 1994
- Structure of GaAs(001) surfaces: The role of electrostatic interactionsPhysical Review B, 1994
- Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1993
- Energetics of GaAs(100)-(2×4) and -(4×2) reconstructionsPhysical Review Letters, 1993
- Step and kink energetics on GaAs(001)Physical Review Letters, 1993
- Energetics of As dimers on GaAs(001) As-rich surfacesPhysical Review Letters, 1993
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- Molecular-beam epitaxy growth mechanisms on GaAs(100) surfacesJournal of Vacuum Science & Technology B, 1987