Structures of As-Rich GaAs(001)-(2 × 4) Reconstructions
- 17 October 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 73 (16) , 2208-2211
- https://doi.org/10.1103/physrevlett.73.2208
Abstract
Scanning tunneling microscope (STM) images together with reflection high-energy electron diffraction (RHEED) showed for the first time convincingly that the molecular-beam epitaxially grown GaAs(001)-(2 × 4) , , and phases all have the same outermost surface layer of the unit cell, which consists of two As dimers and two dimer vacancies. Based on the STM and RHEED observations and dynamical RHEED calculation, a structure model consistent with various observations is proposed.
Keywords
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