Pyroelectric IR-CCD image sensor

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Abstract
A room-temperature-operated infrared image sensor CCD having 64 × 32 infrared-sensitive MOS gates has been developed by combining a pyroelectric material and a Si-CCD. A pyroelectric LiTaO3, plate is attached to the Si CCD with dielectric materials such as glycerin and di-n-butylsulfone, which have low melting point, large dielectric constant, low thermal conductivity and good insulation property. Capacitance of metal-LiTaO3,-glycerin-SiO2-Si structure has been studied as parameters of applied voltage and chopping frequency of infrared light, and its Si surface potential is confirmed to be controlled by the infrared irradiation. Infrared sensitivity of the CCD has been analyzed by solving thermal conduction equation and electrical circuit equation, and optimum structure and operation condition have been discussed. Basic characteristics of infrared response of the IR-CCD have been obtained, and a simple imaging has been tried by using this sensor.

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