Disordering, intermixing, and thermal stability of GaInP/AlInP superlattices and alloys

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Abstract
The disordering of an ordered state of Ga0.5In0.5P and the partial intermixing of Ga0.5In0.5P/Al0.5In0.5P superlattices has been demonstrated at temperatures between 650 and 975 °C. The localized disordering or intermixing was accomplished by the deposition of SiO2 followed by rapid thermal annealing. Regions with no SiO2 showed minimal intermixing over this temperature range while the capped areas exhibited superlattice energy shifts up to 47 meV. Bulk Ga0.5In0.5P disordered at 900–925 °C for these samples with SiO2 while remaining ordered for samples with no SiO2. The degree of disordering or intermixing was measured using room-temperature and low-temperature photoluminescence and Raman spectroscopy.