Proton damage effects in an EEV CCD imager
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (6) , 1865-1871
- https://doi.org/10.1109/23.45380
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Radiation damage in scientific charge-coupled devicesIEEE Transactions on Nuclear Science, 1989
- Extreme Damage Events Produced by Single ParticlesIEEE Transactions on Nuclear Science, 1987
- Permanent Damage Produced by Single Proton Interactions in Silicon DevicesIEEE Transactions on Nuclear Science, 1986
- Characterization of dark current non-uniformities in charge-coupled devicesSolid-State Electronics, 1984
- Soft Errors Due to Protons in the Radiation BeltIEEE Transactions on Nuclear Science, 1981
- Field-enhanced carrier generation in MOS capacitorsSolid-State Electronics, 1974