Characterization of dark current non-uniformities in charge-coupled devices
- 29 February 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (2) , 147-154
- https://doi.org/10.1016/0038-1101(84)90106-0
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Theoretical and practical investigation of the thermal generation in gate controlled diodesSolid-State Electronics, 1981
- Leakage studies in high-density dynamic MOS memory devicesIEEE Transactions on Electron Devices, 1979
- On the analysis of pulsed MOS capacitance measurementSolid-State Electronics, 1978
- Observation of Thermally Generated Carrier in Charge Coupled DevicesJapanese Journal of Applied Physics, 1977
- Thermal carrier generation in charge-coupled devicesIEEE Transactions on Electron Devices, 1975
- Effect of a modified theory of generation currents on an experimental determination of carrier lifetimeSolid-State Electronics, 1974
- An experimental determination of the carrier lifetime near the SiSiO2 interfaceSolid-State Electronics, 1973
- Bulk and optical generation parameters measured with the pulsed MOS capacitorIEEE Transactions on Electron Devices, 1972
- Interpretation of surface and bulk effects using the pulsed MIS capacitorSolid-State Electronics, 1971
- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967