Effect of a modified theory of generation currents on an experimental determination of carrier lifetime
- 30 April 1974
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (4) , 403-404
- https://doi.org/10.1016/0038-1101(74)90132-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- An experimental determination of the carrier lifetime near the SiSiO2 interfaceSolid-State Electronics, 1973
- A theoretical investigation on the generation current in silicon p-n junctions under reverse biasSolid-State Electronics, 1972
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966