Interface excitations in metal-insulator-semiconductor structures
- 15 June 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 11 (12) , 4989-4993
- https://doi.org/10.1103/physrevb.11.4989
Abstract
The interface excitations associated with the inversion layer of a metal-insulator-semiconductor structure are investigated. These excitations can be regarded as coupled modes whose components are the two-dimensional-electron-gas plasmon and the surface plasmon of the metal-insulator interface. The dependence of the coupled modes on the insulator thickness and the gate-electrode plasma frequency are studied.Keywords
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