High-temperature CW operation of InGaAsP-InP semi-insulating buried heterostructure lasers using reactive ion-etching technique
- 1 August 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (8) , 828-829
- https://doi.org/10.1109/68.403986
Abstract
We fabricated 1.5-/spl mu/m semi-insulating buried heterostructure (SI-BH) lasers with InGaAsP-InP strained-layer multiple-quantum wells using a reactive ion etching (RIE) technique for mesa definition. A very high CW operating temperature of 150/spl deg/C was obtained in a 300-/spl mu/m-long laser whose rear facet was HR-coated.Keywords
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