Planar regrowth of InP and InGaAs around reactive ion etched mesas using atmospheric pressure metalorganic vapor phase epitaxy
- 12 July 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (2) , 234-236
- https://doi.org/10.1063/1.110351
Abstract
No abstract availableKeywords
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