Characterization of molecular beam epitaxially grown InSb layers and diode structures
- 31 March 1993
- journal article
- review article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (3) , 387-389
- https://doi.org/10.1016/0038-1101(93)90091-4
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Band structure of InAsSb strained-layer superlatticesJournal of Applied Physics, 1992
- Low Temperature p- and n- Type Doping of InSb Grown on GaAs Using Molecular Beam Epitaxy.MRS Proceedings, 1990
- Molecular beam epitaxy growth of InSb films on GaAsApplied Physics Letters, 1989
- Molecular beam epitaxial growth and characterization of InSb on SiApplied Physics Letters, 1989
- Molecular-beam growth of homoepitaxial InSb photovoltaic detectorsElectronics Letters, 1988
- Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVDJournal of Crystal Growth, 1988
- Growth of InSb and InAs1 − x Sb x by OM‐CVDJournal of the Electrochemical Society, 1984
- InAsSb strained-layer superlattices for long wavelength detector applicationsJournal of Vacuum Science & Technology B, 1984
- OPTICAL ENERGY-GAP VARIATION IN InAs–InSb ALLOYSCanadian Journal of Physics, 1964
- Effects of Dislocations on Mobilities in SemiconductorsPhysical Review B, 1952