Calibrated wafer-level HBM measurements for quasi-static and transient device analysis
- 1 September 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
An improved calibration methodology for simultaneous capturing of voltage and current during an HBM pulse is presented. The capability of this new methodology for ESD protection device characterization and development is demonstrated using the quasi-static and transient response analysis of silicon-controlled rectifier devices.Keywords
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