Characteristics of microwave power GaN HEMTs on 4-inch Si wafers
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 449-452 vol.1
- https://doi.org/10.1109/mwsym.2002.1011652
Abstract
We present the design and development of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a 4-inch Si wafer. The GaN HEMT devices demonstrate a maximum drain current of 900 mA/mm, a peak g/sub m/ of 300 mS/mm, and a microwave output power density of 1.5 W/mm. To the best of the authors' knowledge, these are the best results reported on GaN HEMTs on 4-inch Si wafers.Keywords
This publication has 5 references indexed in Scilit:
- Trapping effects and microwave power performance in AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substratesIEEE Transactions on Electron Devices, 2001
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTsIEEE Electron Device Letters, 2000
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999
- Status of the surface and bulk parasitic effects limiting the performances of GaAs IC'sPhysica B+C, 1985