Effect of Oxygen Incorporation of BHF Etch Rate of Plasma-Enhanced CVD Silicon Nitride Films Prepared in the Temperature Range 50–300°C
- 1 September 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (9R) , 1238-1239
- https://doi.org/10.1143/jjap.24.1238
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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