RHEED-based measurements of atomic segregation at GaAs/AlAs interfaces
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 1056-1058
- https://doi.org/10.1016/0022-0248(93)90790-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- RHEED studies of Ga desorption from GaAs and of As desorption from Si-doped GaAs during growth interruptionJournal of Crystal Growth, 1993
- Atomic-scale roughness of GaAs/AlAs interfaces: A Raman scattering study of asymmetrical short-period superlatticesApplied Physics Letters, 1990
- Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructuresPhysical Review B, 1989
- Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxyJournal of Crystal Growth, 1987
- Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxyApplied Physics Letters, 1984