The Effects of Dose Rate and Implantation Temperature on Lattice Damage and Electrical Activity in Ion-Implanted GaAs
- 1 January 1971
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Low temperature channeling measurements of ion implantation lattice disorder in GaAs†Radiation Effects, 1971
- Nucleation of damage centres during ion implantation of siliconRadiation Effects, 1971
- Flux and fluence dependence of disorder produced during implantation of11B in siliconRadiation Effects, 1971
- The annealing of damage in ion implanted gallium arsenideRadiation Effects, 1971
- Electrical properties of Cd, Zn and S ion-implanted layers in GaAsRadiation Effects, 1970
- Analysis of disorder distributions in boron implanted siliconRadiation Effects, 1970
- Lattice disorder produced in GaAs by 60 keV Cd ions and 70 keV Zn ionsRadiation Effects, 1970
- LATTICE DISORDER PRODUCED IN Si BY 40-keV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIORApplied Physics Letters, 1969
- POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICONApplied Physics Letters, 1969
- Change in Thermal Conductivity upon Low-Temperature Electron Irradiation: GaAsPhysical Review B, 1964