Process Technology and Modeling of a Low-Noise Silicon Bipolar Transistor with Sub-Micron Emitter Widths
- 23 March 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 76, 104-106
- https://doi.org/10.1109/mwsym.1976.1123659
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A more accurate expression for the noise figure of transistorsSolid-State Electronics, 1976
- Determination of a microwave transistor model based on an experimental study of its internal structureSolid-State Electronics, 1975
- Low-noise implanted-base microwave transistorsSolid-State Electronics, 1974
- Characterization of microwave transistorsSolid-State Electronics, 1970