Characterization of microwave transistors
- 31 May 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (5) , 523-542
- https://doi.org/10.1016/0038-1101(70)90134-6
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Design, fabrication, and characterization of a germanium microwave transistorIEEE Transactions on Electron Devices, 1969
- Design and Fabrication of Subnanosecond Current Switch and TransistorsIBM Journal of Research and Development, 1968
- Double diffused high-speed germanium transistorsIEEE Transactions on Electron Devices, 1968
- Three-port scattering parameters for microwave transistor measurementIEEE Journal of Solid-State Circuits, 1968
- Double-diffused silicon and germanium microwave amplifier transistorsIEEE Transactions on Electron Devices, 1968
- Computer-aided transistor design, characterization, and optimizationSolid-State Electronics, 1967
- Effect of junction curvature on breakdown voltage in semiconductorsSolid-State Electronics, 1966
- A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the deviceIEEE Transactions on Electron Devices, 1965
- Expanded contacts and interconnexions to monolithic silicon integrated circuitsSolid-State Electronics, 1965
- Transistor behavior at high frequenciesIRE Transactions on Electron Devices, 1960