Transistor behavior at high frequencies
- 1 January 1960
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Electron Devices
- Vol. 7 (1) , 59-69
- https://doi.org/10.1109/T-ED.1960.14592
Abstract
The tee equivalent circuit for junction transistors has been modified to take account of electric field in the base region. This electric field is the result of a graded impurity density in the base region of the transistor. It is shown that a graded base improves the high-frequency performances of the common base stage; however, the improvement in common emitter performance is considerably less because of the increased "excess" phase which accompanies the improved high-frequency performance. The complex hybrid parameters are calculated for the common base and common emitter configurations; these calculations take into account the parasitic interterminal capacities of the transistor. The common emitter calculations are compared to measured data, and substantial agreement is obtained.Keywords
This publication has 5 references indexed in Scilit:
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