In0.53Ga0.47As metal-semiconductor-metal photodetector using proton bombarded p-type material
- 1 October 1991
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (7) , 3943-3945
- https://doi.org/10.1063/1.349205
Abstract
Metal‐semiconductor‐metal (MSM) photodetectors have been fabricated using as‐grown and proton‐bombarded p‐type In0.53Ga0.47As. Proton bombardment caused a decrease in the dark current, an increase in the breakdown voltage, and an improvement in the speed of the MSM detector. The dark current of the MSM detector with 3×1015 cm−3 proton bombardment is 10 nA at 2 V and 300 nA at 5‐V bias. The dc responsivity is 0.7 A/W and impulse response full width at half maximum is 160 ps for 1.3 μm radiation at 5 V bias.This publication has 7 references indexed in Scilit:
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