Stress in thick diamond films deposited on silicon
- 24 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (25) , 2919-2920
- https://doi.org/10.1063/1.104722
Abstract
20-μm-thick diamond films deposited on Si single-crystal substrates by microwave plasma-enhanced chemical vapor deposition showed significant curvature. The internal stress distribution was estimated using the model of an elastic bimetallic strip. The results indicate that the films are under a mean tensile stress of 1.1 GPa, and are discussed using information from x-ray diffraction and Raman spectra.Keywords
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