GaAsAl0.3Ga0.7As resonant tunneling diodes with atomically flat interfaces grown on (411)A GaAs substrates by MBE
- 31 December 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 40 (1-8) , 417-420
- https://doi.org/10.1016/0038-1101(95)00301-0
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Characterization of GaAs/AlAs interfacial atomic step structures on a (411)A-oriented substrate by transmission electron microscopeJournal of Crystal Growth, 1995
- Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1993
- Tunneling Spectroscopy of Resonant Transmission Coefficient in Double Barrier StructureJapanese Journal of Applied Physics, 1991
- Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfacesJournal of Vacuum Science & Technology B, 1987
- Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothingSurface Science, 1986
- Effect of Silicon Doping Profile on I–V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBEJapanese Journal of Applied Physics, 1986
- Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier WidthsJapanese Journal of Applied Physics, 1986
- Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperatureApplied Physics Letters, 1985
- Tunneling in a finite superlatticeApplied Physics Letters, 1973