Ensemble Monte Carlo simulation of a 0.35- mu m pseudomorphic HEMT
- 1 March 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (3) , 107-110
- https://doi.org/10.1109/55.31684
Abstract
Theoretical analysis and precise comparison to experiment of the performance of a 0.35- mu m pseudomorphic Al/sub 0.15/Ga/sub 0.85/As/In/sub 0.15/Ga/sub 0.85/As high-electron-mobility transistor (HEMT) are presented. The calculations are made using an ensemble Monte Carlo simulation with the unique inclusion of real space transfer as well as the full details of the two-dimensional electron gas, velocity overshoot, and ballistic transport, and the effects of the two-dimensional electric field profile. The calculated current-voltage characteristic is compared to recent experimental measurements showing excellent agreement to within approximately 10% over a full range of gate and drain biases. It is found that near the source, the two-dimensional system dominates the transport physics, while near the pinch-off point, the effects of real space transfer become apparent. It is further determined that the high-speed performance of the pseudomorphic HEMT stems predominantly from the high electron confinement within the two-dimensional system, and the high electron mobility and confinement within the gamma valley in the bulk InGaAs.Keywords
This publication has 21 references indexed in Scilit:
- Theory of electronic transport in two-dimensional Ga0.85In0.15As/Al0.15Ga0.85As pseudomorphic structuresJournal of Applied Physics, 1989
- Ensemble Monte Carlo simulation of an AlGaAs/GaAs heterostructure MIS-like FETIEEE Transactions on Electron Devices, 1988
- Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductanceIEEE Electron Device Letters, 1988
- Theory of the velocity-field relation in AlGaAsJournal of Applied Physics, 1988
- Monte Carlo calculation of velocity-field characteristics in GaInAs/InP and GaInAs/AlInAs single-well heterostructuresJournal of Applied Physics, 1987
- MODFET Ensemble Monte Carlo model including the quasi-two-dimensional electron gasIEEE Transactions on Electron Devices, 1986
- High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistorsIEEE Electron Device Letters, 1985
- Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETsElectronics Letters, 1985
- Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulationIEEE Electron Device Letters, 1985
- Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte Carlo methodJournal of Applied Physics, 1985