Effect of Compensation on ESR Spectrum in Heavily Doped n-Silicon
- 1 May 1966
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 21 (5) , 1013
- https://doi.org/10.1143/jpsj.21.1013
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Electron Spin Resonance in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1965
- ESR of Study of Interaction among Impurity Atoms in SiliconJournal of the Physics Society Japan, 1965
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962