Thickness dependent properties of sputtered a-Si:H from Raman and conductivity measurement
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 185-188
- https://doi.org/10.1016/0022-3093(83)90552-5
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Plasma-hydrogenation effects and the thickness dependence of electrical properties and E.S.R. in undoped CVD a-SiPhilosophical Magazine Part B, 1983
- Thickness dependence of electrical and optical properties and E.S.R. in undoped a-Si: HPhilosophical Magazine Part B, 1982
- Influence of interface charges on transport measurements in amorphous silicon filmsJournal de Physique, 1978