Epitaxial GaN films grown on Si(1 1 1) with varied buffer layers
- 1 July 2001
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 45 (7) , 1173-1177
- https://doi.org/10.1016/s0038-1101(01)00048-x
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- GaN epilayers grown on 100 mm diameter Si(111) substratesSolid-State Electronics, 2000
- Strain determination in heteroepitaxial GaNApplied Physics Letters, 1997