A one-dimensional analytical model for the dual-gate-controlled thin-film SOI MOSFET
- 1 September 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (9) , 489-491
- https://doi.org/10.1109/55.116927
Abstract
A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.Keywords
This publication has 18 references indexed in Scilit:
- Three-dimensional stacked MOS transistors by localized silicon epitaxial overgrowthIEEE Transactions on Electron Devices, 1990
- Modes of operation and radiation sensitivity of ultrathin SOI transistorsIEEE Transactions on Electron Devices, 1990
- Measurements and modeling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300 KIEEE Transactions on Electron Devices, 1990
- Subthreshold slope in thin-film SOI MOSFETsIEEE Transactions on Electron Devices, 1990
- An analytic model for thin SOI transistorsIEEE Transactions on Electron Devices, 1989
- The foundation of a charge-sheet model for the thin-film MOSFETSolid-State Electronics, 1988
- A comparison of MOS inversion layer charge and capacitance formulasIEEE Transactions on Electron Devices, 1986
- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983
- Theory of the fully depleted SOS/MOS transistorSolid-State Electronics, 1980
- Approximations for accumulation and inversion space-charge layers in semiconductorsSolid-State Electronics, 1968