The foundation of a charge-sheet model for the thin-film MOSFET
- 31 October 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (10) , 1497-1500
- https://doi.org/10.1016/0038-1101(88)90021-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Subthreshold behavior of thin-film LPCVD PolySilicon MOSFET'sIEEE Transactions on Electron Devices, 1986
- Subthreshold slope of thin-film SOI MOSFET'sIEEE Electron Device Letters, 1986
- Numerical analysis of switching characteristics in SOI MOSFET'sIEEE Transactions on Electron Devices, 1986
- Deep depleted SOI MOSFETs with back potential control: A numerical simulationSolid-State Electronics, 1985
- The MISIM-FET in thin semiconductor layers: Depletion-approximation model of I-V characteristicsIEEE Transactions on Electron Devices, 1983
- Effects of grain boundaries on the channel conductance of SOl MOSFET'sIEEE Transactions on Electron Devices, 1983
- Moderate inversion in MOS devicesSolid-State Electronics, 1982
- Quantum mechanical determination of the potential and carrier distributions in the inversion layer of metal—oxide—semiconductor devicesPhysica Status Solidi (a), 1979
- A charge-sheet model of the MOSFETSolid-State Electronics, 1978
- Analytical i.g.f.e.t. model including drift and diffusion currentsIEE Journal on Solidstate and Electron Devices, 1978