Quantum mechanical determination of the potential and carrier distributions in the inversion layer of metal—oxide—semiconductor devices
- 16 November 1979
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 56 (1) , 129-141
- https://doi.org/10.1002/pssa.2210560113
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Quantum properties of surface space-charge layersC R C Critical Reviews in Solid State Sciences, 1973
- Carrier concentration in the inversion layer of a MOS field effect transistorSolid-State Electronics, 1973
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Continuously Voltage-Tunable Line Absorption in Surface QuantizationPhysical Review Letters, 1971
- Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistorSolid-State Electronics, 1970
- Carrier mobility in silicon MOST'sSolid-State Electronics, 1969
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Magneto-Oscillatory Conductance in Silicon SurfacesPhysical Review Letters, 1966
- Surface magnetoconductivity experiments on siliconJournal of Physics and Chemistry of Solids, 1961