Carrier mobility in silicon MOST's
- 31 October 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (10) , 775-786
- https://doi.org/10.1016/0038-1101(69)90055-0
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968
- Hall mobility of electrons in the space-charge layer of thin film CdSe transistorsSolid-State Electronics, 1968
- An MOS-oriented investigation of effective mobility theorySolid-State Electronics, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Experimental study of semiconductor surface conductivitySurface Science, 1966
- Surface mobility of holes in thermally oxidized silicon measured by the field effect and the hall effectSurface Science, 1964
- Carrier Surface Scattering in Silicon Inversion LayersIBM Journal of Research and Development, 1964
- Hall Measurements on Silicon Field Effect Transistor StructuresIBM Journal of Research and Development, 1964
- Magneto-Surface Experiments on GermaniumPhysical Review B, 1958
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955